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Developing High Performance GaP/Si Heterojunction Solar Cells
Published on: November 16, 2018
Photoreflectance characteristic about AlGaAs/GaAs heterostructure
Jae-In Yu1, Jae-Gon Yun, Dong-Lyeul Kim
1Department of Physics, Yeungnam University, Gyeongsan 712-749, South Korea.
Abstract:
We investigated the photoreflectance (PR) spectra of as-grown, etched AlGaAs/GaAs heterostructure sample. As etching time increases, the electric fields are reduced. And the surface and interface electric field calculated for the AlGaAs/GaAs sample, respectively.

