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Updated: May 6, 2026

Preparation of Macroporous Epitaxial Quartz Films on Silicon by Chemical Solution Deposition

Preparation of Macroporous Epitaxial Quartz Films on Silicon by Chemical Solution Deposition

Published on: December 21, 2015

Solution-processed silicon films and transistors.

Tatsuya Shimoda¹, Yasuo Matsuki, Masahiro Furusawa

¹Technology Platform Research Centre, Seiko Epson Corporation, 281 Fujimi, Fujimi-machi, Nagano-ken, 399-0293 Japan.

|April 7, 2006

Summary

Researchers developed a new solution process for silicon thin-film transistors (TFTs) using a liquid precursor. This method enables printing of high-performance polycrystalline silicon TFTs, offering a cost-effective alternative to conventional silicon manufacturing.

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Area of Science:

Materials Science
Electronics Engineering
Semiconductor Physics

Background:

Solution processing offers a cost-effective alternative to vacuum-based methods for fabricating electronic devices.
Current research focuses on organic and metal chalcogenide semiconductors for printable electronics, facing challenges in reliability and performance.
Silicon-based electronics dominate the industry due to their high performance, but traditional manufacturing is complex and expensive.

Purpose of the Study:

To demonstrate the feasibility of solution processing for high-quality silicon films.
To develop a silane-based liquid precursor for solution-processed silicon thin-film transistors (TFTs).
To achieve high charge carrier mobilities in solution-processed silicon TFTs, comparable to or exceeding existing technologies.

Main Methods:

Development of a novel silane-based liquid precursor for silicon deposition.
Fabrication of polycrystalline silicon (poly-Si) films using spin-coating and ink-jet printing techniques.
Characterization of the resulting silicon thin-film transistors (TFTs) to determine their electrical performance.

Main Results:

Successful preparation of polycrystalline silicon films via solution processing using the developed precursor.
Fabrication of silicon TFTs with mobilities of 108 cm2 V(-1) s(-1) (spin-coating) and 6.5 cm2 V(-1) s(-1) (ink-jet printing).
Achieved mobilities surpass those of current solution-processed organic TFTs and amorphous silicon TFTs.

Conclusions:

Solution processing of silicon is a viable method for fabricating high-performance TFTs.
The developed silane-based precursor enables cost-effective, large-area production of silicon electronics.
This breakthrough could significantly impact the manufacturing of flexible displays and other electronic applications.