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Related Experiment Videos

Charge transfer between a superconductor and a hopping insulator.

V I Kozub1, A A Zyuzin, Y M Galperin

  • 1A.F. Ioffe Physico-Technical Institute of Russian Academy of Sciences, 194021 St. Petersburg, Russia.

Physical Review Letters
|April 12, 2006
PubMed
Summary

We developed a theory for low-temperature charge transfer between superconductors and hopping insulators. This research reveals interface resistance governed by Cooper pair conversion and percolation effects, exceeding bulk resistance in mesoscopic systems.

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Area of Science:

  • Condensed Matter Physics
  • Quantum Mechanics
  • Materials Science

Background:

  • Understanding charge transfer at superconductor-insulator interfaces is crucial for novel electronic devices.
  • Low-temperature phenomena in disordered materials like hopping insulators present unique transport challenges.

Purpose of the Study:

  • To develop a theoretical framework for low-temperature charge transfer between a superconductor and a hopping insulator.
  • To investigate the role of time-reversal reflection and percolation in interface transport.
  • To calculate and analyze the interface resistance in such systems.

Main Methods:

  • Theoretical modeling of coherent two-electron-Cooper pair conversion.
  • Calculation of interface resistance considering time-reversal reflection.

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  • Generalization of percolation theory to include surface effects for analyzing transport through disordered systems.

    • Main Results:

    • Charge transfer is governed by a coherent two-electron-Cooper pair conversion process at the interface.
    • The interplay between time-reversal reflection and percolation significantly influences interface transport.
    • Time-reversal interface resistance is experimentally accessible and can surpass bulk hopping resistance in mesoscopic structures.

    Conclusions:

    • The developed theory provides a comprehensive understanding of charge transfer dynamics at superconductor-hopping insulator interfaces.
    • The findings highlight the importance of interface effects and quantum phenomena in determining transport properties.
    • The study suggests potential for novel applications in mesoscopic electronic devices by manipulating interface resistance.