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Related Experiment Videos

Evidence for p-type doping of InN.

R E Jones1, K M Yu, S X Li

  • 1Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA.

Physical Review Letters
|April 12, 2006
PubMed
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This study presents the first successful p-type doping of indium nitride (InN). Ion irradiation converts the bulk from p-type to n-type, enabling photoluminescence recovery and overcoming surface layer issues.

Area of Science:

  • Semiconductor Physics
  • Materials Science
  • Solid State Chemistry

Background:

  • Indium nitride (InN) is a crucial semiconductor material with unique electronic properties.
  • Achieving stable p-type doping in InN has been a significant challenge hindering its technological applications.
  • Existing InN films often exhibit an n-type surface layer that complicates bulk property characterization.

Purpose of the Study:

  • To demonstrate the first successful p-type doping of indium nitride (InN) using magnesium (Mg).
  • To investigate the electrical properties and surface effects of Mg-doped InN (InN:Mg) films.
  • To develop a method for overcoming the surface n-type layer to access the bulk p-type properties.

Main Methods:

  • Fabrication of InN:Mg films.

Related Experiment Videos

  • Capacitance-voltage (C-V) measurements to analyze doping profiles and carrier concentrations.
  • Irradiation with 2 MeV He+ ions to modify the film's conductivity.
  • Photoluminescence (PL) spectroscopy to assess material quality and electronic transitions.

    • Main Results:

    • Successful p-type doping of the InN bulk was achieved with Mg.
    • A thin n-type inversion layer was observed at the surface, impeding direct electrical access to the p-type bulk.
    • Capacitance-voltage measurements confirmed a net concentration of ionized acceptors beneath the surface.
    • Helium ion (He+) irradiation effectively converted the bulk InN:Mg from p-type to n-type.
    • Photoluminescence was recovered after ion irradiation, indicating improved material quality.

    Conclusions:

    • The study provides the first evidence of successful p-type doping in InN.
    • A two-layer model (n-type surface, p-type bulk) explains the electrical behavior of InN:Mg films.
    • Ion irradiation offers a viable method to convert the bulk to n-type, enabling photoluminescence and overcoming surface limitations.