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Evidence for p-type doping of InN
1Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA.
Physical Review Letters
|April 12, 2006
Summary
This study presents the first successful p-type doping of indium nitride (InN). Ion irradiation converts the bulk from p-type to n-type, enabling photoluminescence recovery and overcoming surface layer issues.
Area of Science:
- Semiconductor Physics
- Materials Science
- Solid State Chemistry
Background:
- Indium nitride (InN) is a crucial semiconductor material with unique electronic properties.
- Achieving stable p-type doping in InN has been a significant challenge hindering its technological applications.
- Existing InN films often exhibit an n-type surface layer that complicates bulk property characterization.
Purpose of the Study:
- To demonstrate the first successful p-type doping of indium nitride (InN) using magnesium (Mg).
- To investigate the electrical properties and surface effects of Mg-doped InN (InN:Mg) films.
- To develop a method for overcoming the surface n-type layer to access the bulk p-type properties.
Main Methods:
- Fabrication of InN:Mg films.
- Capacitance-voltage (C-V) measurements to analyze doping profiles and carrier concentrations.
- Irradiation with 2 MeV He+ ions to modify the film's conductivity.
- Photoluminescence (PL) spectroscopy to assess material quality and electronic transitions.
Main Results:
- Successful p-type doping of the InN bulk was achieved with Mg.
- A thin n-type inversion layer was observed at the surface, impeding direct electrical access to the p-type bulk.
- Capacitance-voltage measurements confirmed a net concentration of ionized acceptors beneath the surface.
- Helium ion (He+) irradiation effectively converted the bulk InN:Mg from p-type to n-type.
- Photoluminescence was recovered after ion irradiation, indicating improved material quality.
Conclusions:
- The study provides the first evidence of successful p-type doping in InN.
- A two-layer model (n-type surface, p-type bulk) explains the electrical behavior of InN:Mg films.
- Ion irradiation offers a viable method to convert the bulk to n-type, enabling photoluminescence and overcoming surface limitations.
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