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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

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Less strain energy despite fewer misfit dislocations: the impact of ordering

Th Schmidt1, R Kröger, J I Flege

  • 1Institute of Solid State Physics, University of Bremen, Otto-Hahn-Allee 1, 28359 Bremen, Germany. tschmidt@physik.uni-bremen.de

Physical Review Letters
|April 12, 2006
PubMed

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