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All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
Electron dynamics of silicon surface states: second-harmonic hole burning on Si(111)-(7 x 7)
John A McGuire1, Markus B Raschke, Y Ron Shen
1Department of Physics, University of California at Berkeley, Berkeley, California 94720, USA.
Abstract:
We report the first all-optical study of homogeneous linewidths of surface excitations by the spectral-hole-burning technique with surface-specific second-harmonic generation as a probe. Measurement of transient spectral holes induced by a 100 fs pump pulse in excitations of the surface dangling-bond states of Si(111)-(7 x 7) led to a pump-fluence-dependent homogeneous linewidth as broad as approximately 100 meV or a dephasing time as short as 15 fs. The hole-burning spectra also revealed a strong coupling between the localized dangling-bond states and the associated surface phonon mode at 570 cm(-1). Carrier-carrier scattering was responsible for the linear dependence of the dephasing rate on pump fluence, and the carrier screening effect appeared to be weak.
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