Initial surface reactions of TiO2 atomic layer deposition onto SiO2 surfaces: density functional theory calculations

We present a density functional theory (DFT) study of the initial surface reactions of TiO2 deposition onto a SiO2 substrate using atomic layer deposition (ALD). The precursors for the deposition process were chosen to be TiCl4 and H2O, and several cluster models were used for the SiO2 substrate. We predict the activation barriers, transition states, and reaction pathways of the surface reactions, and we investigate the effect of surface heterogeneity (such as the presence of siloxane bridges) on the reactivity of the SiO2 surface. Our study suggests that the concentration and arrangement of different reactive groups on the substrate will strongly dictate the process of film growth during ALD, including the film morphology and the growth rate.