A Novel real-time dosimetry technique based on radiation-induced surface activation

Area of Science:

• Materials Science
• Radiation Physics
• Sensor Technology

Background:

• Traditional dosimetry methods face limitations in harsh environments.
• The radiation-induced surface activation (RISA) phenomenon offers a novel approach.
• Understanding RISA in oxidized semiconductor or metal films is crucial for dosimetry.

Purpose of the Study:

• To propose and characterize a novel real-time dosimetry technique based on the RISA phenomenon.
• To evaluate the performance of the RISA dosemeter in various conditions, including high temperatures and harsh environments.
• To demonstrate the advantages of RISA dosimetry over conventional methods.

Main Methods:

• Investigated the RISA phenomenon on oxidized semiconductor or metal films upon radiation incidence.
• Developed a RISA dosemeter prototype.
• Tested the dosemeter's response to (60)Co gamma-rays and its stability at high temperatures.
• Measured the output's proportionality to dose equivalent rate and output fluctuation.

Main Results:

• The RISA dosemeter's output is proportional to the dose equivalent rate in harsh environments.
• Output fluctuation was less than 2.5% beyond 1.8 MSv for (60)Co gamma-rays.
• Transient currents observed in simple insulators were not detected in the RISA dosemeter.
• The dosemeter demonstrated reliable performance even at high temperatures.

Conclusions:

• The RISA phenomenon provides a viable basis for a novel real-time dosimetry technique.
• The RISA dosemeter exhibits advantageous characteristics including stability, proportionality, and high-temperature operability.
• This technique shows significant potential for radiation monitoring in demanding applications.