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X-ray reflectivity study of semiconductor interfaces.

M K Sanyal1, A Datta, S Banerjee

  • 1Saha Institute of Nuclear Physics, 1/AF Bidhan Nagar, Calcutta-700 064, India.

Journal of Synchrotron Radiation
|May 1, 1997
PubMed
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X-ray reflectivity studies reveal interface asymmetry in AlAs-AlGaAs and Ge-Si-Ge semiconductor multilayers. This technique directly provides compositional depth profiles for thin multilayers.

Area of Science:

  • Materials Science
  • Solid State Physics
  • Semiconductor Heterostructures

Background:

  • Semiconductor multilayers are crucial for advanced electronic and optoelectronic devices.
  • Understanding interface properties is key to controlling material performance.
  • Growth techniques like metal-organic vapour-phase epitaxy and ion-beam sputtering are used to fabricate these structures.

Purpose of the Study:

  • To investigate interface asymmetry in AlAs-AlGaAs and Ge-Si-Ge semiconductor multilayers.
  • To analyze the structural and compositional characteristics of interfaces using X-ray reflectivity.
  • To demonstrate the capability of X-ray reflectivity for determining compositional depth profiles in thin multilayers.

Main Methods:

  • X-ray reflectivity (XRR) measurements were performed on synthesized multilayers.

Related Experiment Videos

  • Multilayers included both III-V (AlAs-AlGaAs) and II-IV (Ge-Si-Ge) semiconductor systems.
  • Growth methods employed were metal-organic vapour-phase epitaxy (MOVPE) and ion-beam sputtering deposition (IBSD).

    • Main Results:

    • Asymmetric interface structures were observed in both AlAs-AlGaAs and Ge-Si-Ge multilayers.
    • The Si-on-Ge interface was found to be sharp, while the Ge-on-Si interface showed the formation of an Si(0.4)Ge(0.6) alloy.
    • The AlAs-on-AlGaAs interface exhibited significantly greater roughness compared to the AlGaAs-on-AlAs interface.

    Conclusions:

    • X-ray reflectivity is a powerful tool for characterizing semiconductor multilayer interfaces.
    • Interface asymmetry and alloy formation are significant factors in the growth of these heterostructures.
    • The study confirms that XRR can directly yield detailed compositional depth profiles for thin multilayer systems.