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Gd/W(110) interface formation studied by w 4f surface core-level spectroscopy.

R G White, R I Blyth, N P Tucker

    Journal of Synchrotron Radiation
    |September 1, 1995
    PubMed
    Summary
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    Tungsten (W) 4f core-level spectra reveal distinct signals from bulk and interface W in Gadolinium (Gd) films on W(110). This indicates an abrupt W/Gd interface without alloying, with intermediate phases observed at low Gd coverages.

    Area of Science:

    • Materials Science
    • Surface Science
    • Condensed Matter Physics

    Background:

    • Understanding thin film interfaces is crucial for developing advanced materials.
    • Gadolinium (Gd) and Tungsten (W) are important elements in various technological applications.
    • Characterizing the interfacial properties of W/Gd systems provides insights into magnetic and electronic behaviors.

    Purpose of the Study:

    • To investigate the interfacial structure of Gadolinium (Gd) films deposited on a Tungsten (W) surface.
    • To determine the chemical states of W atoms at the interface using core-level spectroscopy.
    • To identify any alloying or intermediate phases formed at the W/Gd interface.

    Main Methods:

    • X-ray Photoelectron Spectroscopy (XPS) was employed to analyze W 4f core-level spectra.

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  • Thin films of Gd were deposited onto a W(110) substrate under controlled conditions.
  • Spectral deconvolution was used to identify different W components corresponding to bulk and interface W.

    • Main Results:

    • W 4f core-level spectra exhibited distinct components attributed to bulk W and interface W.
    • The absence of significant peak shifts or broadening suggests an abrupt W/Gd interface.
    • Evidence for intermediate (n x 2) phases was observed at submonolayer Gd coverages.

    Conclusions:

    • The W/Gd interface is characterized by abruptness, with minimal or no intermixing/alloying.
    • The formation of intermediate phases at low coverages indicates a complex initial growth mode of Gd on W.
    • These findings are important for controlling interfacial properties in W/Gd heterostructures.