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Field Effect Transistor

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...

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Related Experiment Video

Updated: May 21, 2026

Microfluidic Chips Controlled with Elastomeric Microvalve Arrays

Microfluidic Chips Controlled with Elastomeric Microvalve Arrays

Published on: October 1, 2007

Electrokinetic flow control in microfluidic chips using a field-effect transistor.

Keisuke Horiuchi¹, Prashanta Dutta

¹School of Mechanical and Materials Engineering, Washington State University, Pullman, WA 99164-2920, USA. dutta@mail.wsu.edu

|June 2, 2006

Summary

This summary is machine-generated.

A novel field-effect transistor controls microfluidic flow by locally altering surface charge. This method enables precise manipulation of fluid dynamics in microchannels using low gate voltages, driven by leakage current effects.

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Area of Science:

Microfluidics
Surface Chemistry
Electrical Engineering

Background:

Microfluidic devices require precise flow control for various applications.
Existing methods for flow control can be complex or lack spatial resolution.

Purpose of the Study:

To develop a field-effect transistor (FET) for localized control of electroosmotic flow (EOF) in microfluidic chips.
To investigate the mechanism of flow control via surface charge modification using FETs.

Main Methods:

Fabrication of microchannels and FETs on polydimethylsiloxane (PDMS) using soft lithography.
Application of gate voltage to locally alter zeta potential.
Micro particle image velocimetry (PIV) for high-resolution velocity measurements.
Development of a leakage capacitance model to predict zeta potential.

Main Results:

Achieved local flow control in microchannels at low gate voltages (<50 V).
Demonstrated that flow control is primarily due to current leakage at the PDMS-glass interface.
Validated the leakage capacitance model with experimental zeta potential data.
Successfully controlled flow distribution in a T-channel junction.

Conclusions:

Localized surface charge modification using FETs is an effective method for microfluidic flow control.
The leakage-current based mechanism provides a low-voltage, high-resolution approach to manipulate fluid flow.
This technique offers potential for advanced applications in microfluidic systems.