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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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Quantitative analysis of HOLZ line splitting in CBED patterns of epitaxially strained layers

F Houdellier1, C Roucau, L Clément

  • 1Centre d'Elaboration de Matériaux et d'Etudes Structurales, C.N.R.S., 29, Rue Jeanne Marvig, BP 94347 31055 Toulouse Cedex 4, France. florent@cemes.fr

Ultramicroscopy
|June 6, 2006
PubMed

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