Related Experiment Video
Updated: Aug 7, 2026
Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications
Published on: April 21, 2016
Silicon p-FETs from ultrahigh density nanowire arrays
Dunwei Wang1, Bonnie A Sheriff, James R Heath
1Division of Chemistry and Chemical Engineering, California Institute of Technology, Pasadena, California 91125, USA.
Abstract:
Statistical numbers of field-effect transistors (FETs) were fabricated from a circuit of 17-nm-wide, 34-nm-pitch Si nanowires boron doped at a level of 10(18) cm-3. Top-gated 4-microm-wide Si nanowire p-FETs yielded low off-currents (approximately 10(-12) A), high on/off ratios (10(5)-10(6)), good on current values (30 microA/microm), high mobilities (approximately 100 cm2/V-s), and low subthreshold swing values (approximately 80 mV/decade between 10(-12) and 10(-10) A increasing to 200 mV/decade between 10(-10)-10(-8) A).
