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Related Experiment Videos

Tunable anomalous Hall effect in a nonferromagnetic system.

John Cumings1, L S Moore, H T Chou

  • 1Department of Physics, Stanford University, California 94305, USA.

Physical Review Letters
|June 29, 2006
PubMed
Summary

We measured Hall resistivity in a magnetic two-dimensional electron gas. An excess resistivity, linked to magnetic polarization, suggests scattering near the localization transition.

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Area of Science:

  • Condensed matter physics
  • Materials science
  • Quantum phenomena

Background:

  • Two-dimensional electron gases (2DEGs) are crucial for understanding electronic properties.
  • Magnetic doping introduces complex interactions in 2DEGs.
  • Hall resistivity measurements probe charge carrier behavior and magnetic effects.

Purpose of the Study:

  • Investigate the low-field Hall resistivity of a magnetically doped 2DEG.
  • Analyze the temperature and carrier density dependence of excess Hall resistivity.
  • Correlate excess Hall resistivity with magnetic polarization and scattering mechanisms.

Main Methods:

  • Low-field Hall resistivity measurements as a function of temperature and carrier density.
  • Shubnikov-de Haas oscillations for carrier density extraction.

Related Experiment Videos

  • Analysis of excess Hall resistivity in relation to paramagnetic polarization.

    • Main Results:

    • An excess Hall resistivity was observed, increasing with decreasing temperature.
    • This excess resistivity correlates with the sample's paramagnetic polarization.
    • The findings are analogous to the ferromagnetic anomalous Hall effect.

    Conclusions:

    • The observed excess Hall resistivity is attributed to skew scattering of carriers by disorder.
    • The behavior suggests proximity to a localization transition in the magnetically doped 2DEG.
    • This study provides insights into electron scattering and magnetic phenomena in low-dimensional systems.