Thickness vibrations of a piezoelectric plate under biasing fields

Gauss' law relates the electric flux through a closed surface to the net charge enclosed by that surface. Gauss's law can be applied to find the electric field and the charge enclosed in a region depending on its charge distribution.
Consider a cross-section of a thin, infinite conducting plate having a positive charge. For such a large thin plate, as the thickness of the plate tends to zero, the positive charges lie on the plate's two large faces. Without an external electric field, the...

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...

A parallel-plate capacitor with capacitance C, whose plates have area A and separation distance d, is connected to a resistor R and a battery of voltage V. The current starts to flow at t = 0. What is the displacement current between the capacitor plates at time t? From the properties of the capacitor, what is the corresponding real current?
To solve the problem, we can use the equations from the analysis of an RC circuit and Maxwell's version of Ampère's law.
For the first part of the problem,...

When a flat plate is submerged in a fluid, the fluid exerts pressure on the plate. This pressure can lead to many different phenomena, including drag and buoyancy. To understand the behavior of the fluid over a flat plate of variable width, it is essential to analyze the distribution of the pressure exerted.
The pressure distribution on the plate can be calculated by determining the force that acts on a differential area strip of the plate. Thus, the magnitude of the force is equal to the...

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

When a curved plate of constant width is submerged in a liquid, the pressure acting normal to the plate varies continuously both in magnitude and direction. Calculating the magnitude and location of the resultant force at a point is often challenging for such cases. One of the methods to determine the resultant force and its location involves separately calculating the horizontal and vertical components of the resultant force. This complex calculation can be simplified by representing the...