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Updated: Aug 7, 2026
Characterizing Far-infrared Laser Emissions and the Measurement of Their Frequencies
Published on: December 18, 2015
Single-frequency Sb-based distributed-feedback lasers emitting at 2.3 microm above room temperature for application
Abdelmagid Salhi1, David Barat, Daniele Romanini
1Centre d'Electronique et de Micro-Optoélectronique de Montpellier, Centre National de la Recherche Scientifique, Unité Mixte de Recherche 5507, Place Eugène Bataillon, CC 67, Université Montpellier 2, France.
Abstract:
GaInAsSb/GaAlAsSb/GaSb distributed-feedback (DFB) laser diodes based on a type I active region were fabricated by molecular beam epitaxy at the Centre d'Electronique et de Micro-Optoélectronique de Montpellier (CEM2). The DFB processing was done by Nanoplus Nanosystems and Technologies GmbH. The devices work in the continuous-wave regime above room temperature around an emission wavelength of 2.3 microm with a side-mode suppression ratio greater than 25 dB and as great as 10 mW of output power. The laser devices are fully characterized in terms of optical and electrical properties. Their tuning properties made them adaptable to tunable diode laser absorption spectroscopy because they exhibit more than 220 GHz of continuous tuning by temperature or current. The direct absorption of CH4 is demonstrated to be possible with high spectral selectivity.
