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Published on: December 7, 2017
Direct electrical measurement of the self-assembled nickel silicide nanowire
Joondong Kim1, Wayne A Anderson
1Department of Electrical Engineering, University at Buffalo, State University of New York, 14260, USA. joonkim@postech.ac.kr
Abstract:
We present results from the direct electrical measurement of an as-grown nanowire. The nickel silicide (NiSi) nanowire was spontaneously grown across a trench between two electrodes used for measurement. The NiSi nanowire, 58 nm in diameter and 2.9 microm in length, showed a low resistance characteristic of 147.9 Omega. This unique method is straightforward and does not require removal of a grown nanowire to be moved into a measurement environment.
