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Updated: Aug 7, 2026

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
Published on: December 7, 2015
Effect of diameter variation in a large set of carbon nanotube transistors
Yu-Chih Tseng1, Kinyip Phoa, David Carlton
1Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, 94720, USA. tsengy@eecs.berkeley.edu
Abstract:
A study involving a large number of carbon nanotube transistors reveals that the nanotube diameter and the metal contact material play key roles in determining the on- and off-state currents of these devices. The results are discussed in terms of the Schottky barrier at the metal-semiconductor junction and the variation of this barrier relative to the alignment of energy levels between the carbon nanotube and the metal.
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