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Related Experiment Videos

Internal field switching in CdSe quantum dot films on Si.

Shaibal K Sarkar1, Hagai Cohen, Gary Hodes

  • 1Department of Materials and Interfaces, The Weizmann Institute of Science, Rehovot 76100, Israel.

The Journal of Physical Chemistry. B
|July 21, 2006
PubMed
Summary

CdSe quantum dot films exhibit n-type behavior, but can switch to p-type on silicon due to a Cd(OH)2 layer. This photoresponse is tunable via light intensity or electron injection.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Semiconductor Physics

Background:

  • Cadmium selenide (CdSe) quantum dots are crucial for optoelectronic applications.
  • Thin films of CdSe quantum dots often exhibit intrinsic semiconductor properties.
  • Surface interactions can significantly alter the electronic behavior of nanomaterials.

Purpose of the Study:

  • Investigate the anomalous p-type photoresponse of CdSe quantum dot films on silicon substrates.
  • Determine the underlying mechanism responsible for the observed p-type behavior.
  • Explore methods to control and switch the photoresponse of these films.

Main Methods:

  • Chemical bath deposition of CdSe quantum dot thin films.
  • Surface photovoltage spectroscopy (SPV).

Related Experiment Videos

  • X-ray photoelectron spectroscopy (XPS) adapted for surface analysis.

    • Main Results:

    • CdSe films typically show n-type behavior, but can exhibit p-type behavior on Si under specific conditions.
    • A cadmium hydroxide (Cd(OH)2) interfacial layer on Si is identified as the cause of p-type behavior.
    • The p-type photoresponse can be modulated by light intensity and external electron injection.
    • A competition between hole traps in CdSe and electron traps in Cd(OH)2 governs the film's electronic fields.

    Conclusions:

    • The interfacial Cd(OH)2 layer plays a critical role in determining the photoelectronic properties of CdSe quantum dot films on Si.
    • The observed p-type behavior and its tunability are explained by trap dynamics at the CdSe/Cd(OH)2/Si interface.
    • Understanding these interfacial effects is key for designing CdSe-based devices with controlled charge separation and photoresponse.