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Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Published on: April 12, 2018
Field-effect characteristics and screening in double-walled carbon nanotube field-effect transistors
1Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China.
The Journal of Physical Chemistry. B
|July 21, 2006
Summary
Field-effect transistors (FETs) using double-walled carbon nanotubes (DWCNTs) show varied electrical properties. Semiconducting-metallic DWCNT FETs exhibit unique gate-voltage responses due to charge screening, impacting device performance.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Field-effect transistors (FETs) are crucial electronic components.
- Carbon nanotubes (CNTs) offer unique electronic properties for next-generation devices.
- Double-walled carbon nanotubes (DWCNTs) present complex electrical characteristics due to their multi-shell structure.
Purpose of the Study:
- To investigate the field-effect characteristics of DWCNT-based FETs.
- To correlate observed electrical properties with the structural configurations of DWCNT shells.
- To understand the unique electrical behavior of semiconducting-metallic (S-M) DWCNT devices.
Main Methods:
- Fabrication of 125 DWCNT FET devices.
- Electrical transport measurements to characterize FET behavior.
- Analysis of device characteristics based on semiconducting (S) and metallic (M) shell combinations (S-S, M-M, M-S, S-M).
Main Results:
- 52 DWCNT FETs showed semiconducting, 44 metallic, and 29 mixed characteristics.
- Identified characteristics linked to S-S, M-M/M-S, and S-M shell combinations.
- S-M DWCNT FETs exhibited unique gate-voltage response due to charge screening by the inner metallic shell.
Conclusions:
- The intershell interaction and charge screening in S-M DWCNT FETs significantly affect device performance.
- Screening effect is influenced by temperature and tube diameter, posing a challenge for DWCNT FETs.
- Similar screening effects are anticipated in multi-walled carbon nanotubes (MWCNTs).
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