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Updated: Aug 7, 2026

Seedless Growth of Bismuth Nanowire Array via Vacuum Thermal Evaporation
Published on: December 21, 2015
A facile sulfur vapor assisted reaction method to grow boron nitride nanorings at relative low temperature
Xiaopeng Hao1, Yongzhong Wu, Jie Zhan
1State Key Lab of Crystal Materials, Shandong University, Jinan 250100, People's Republic of China.hxp@icm.sdu.edu.cn
Abstract:
Boron nitride (BN) nanorings were synthesized using a sulfur vapor assisted solid-state method at 600 degrees C. The rings had typical diameters of 100-300 nm, and the shells were 5-20 nm thick and about 50 nm wide. On the basis of the characterization of X-ray powder diffraction pattern (XRD), X-ray photoelectron spectroscopy (XPS), and Fourier transformation infrared spectroscopy (FTIR) measurement, the as-prepared product was pure-phase hexagonal BN. High-resolution transmission electron microscopy (HRTEM) images proved that the nanorings were formed through the coiling of the (002) planes of hexagonal BN. A possible growth process for BN nanorings is suggested.
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