Electronic properties of n-type carbon nanotubes prepared by CF4 plasma fluorination and amino functionalization

Single-walled carbon nanotubes (SWNTs) have been fluorinated by CF4 plasma exposure and further functionalized with 1,2-diaminoethane. The degree of amino functionalization is dependent on the degree of initial fluorination rather than oxygen or carbon defects. Reaction at both ends of 1,2-diaminoethane was observed to increase with fluorine content. Back-gated SWNT devices have shown p-type semiconducting behavior for CF4-functionalized SWNTs and n-type semiconducting behavior for amino-functionalized SWNTs. The degree of n-type behavior increases with the amount of nitrogen attached to the SWNTs.