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Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Published on: April 12, 2018
Beyond the metal-insulator transition in polymer electrolyte gated polymer field-effect transistors
Anoop S Dhoot1, Jonathan D Yuen, Martin Heeney
1Center for Polymers and Organic Solids, University of California, Santa Barbara, CA 93106, USA.
Abstract:
We have studied the carrier transport in poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene) field-effect transistors (FETs) at very high field-induced carrier densities (10(15) cm(-2)) using a polymer electrolyte as gate and gate dielectric. At room temperature, we find high current densities, 2 x 10(6) A/cm(2), and high metallic conductivities, 10(4) S/cm, in the FET channel; at 4.2 K, the current density is sustained at 10(7) A/cm(2). Thus, metallic conductivity persists to low temperatures. The carrier mobility in these devices is approximately 3.5 cm(2).V(-1).s(-1) at 297 K, comparable with that found in fully crystalline organic devices.
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