Related Experiment Video
Updated: Aug 6, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Published on: April 12, 2018
Optoelectronic switches based on wide band gap semiconductors
Maciej Hebda1, Grazyna Stochel, Konrad Szaciłowski
1Faculty of Chemistry, Jagiellonian University, Ingardena 3, 30-060 Kraków, Poland.
Abstract:
Switching of photocurrent direction in semiconducting systems upon changes of the electrode potential or incident light wavelength was realized by a series of photoelectrodes covered with titania modified with pentacyanoferrate complexes, [Fe(CN)(5)L](n)(-) (L = NH(3), thiodiethanol, thiodipropanol). These materials were characterized by optical spectroscopy and electrochemistry. The structure of the surface complexes was modeled using simple quantum-chemical models. The electrodes described in this paper enable control of the photocurrent direction by two stimuli: Changing the wavelength or the photoelectrode potential easily switches the direction of photocurrent. The materials are different from those of similar characteristics studied by other authors: They are not composites comprising of two types of semiconductors but rather engineered uniform materials. The photocurrent switching phenomenon is an intrinsic feature resulting from a specific electronic structure of the surface-modified semiconductor.
Related Concept Videos
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Semiconductors
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Field Effect Transistor
Switching of BJT
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are reverse-biased. The...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

