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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
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Oxygen-deficient line defects in an ultrathin aluminum oxide film

M Schmid1, M Shishkin, G Kresse

  • 1Institut für Allgemeine Physik, Technische Universität Wien, A 1040 Wien, Austria.

Physical Review Letters
|August 16, 2006
PubMed

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