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Updated: Aug 6, 2026

Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis
Published on: May 10, 2021
Electrical properties and defect chemistry of TiO2 single crystal. III. Equilibration kinetics and chemical diffusion
M K Nowotny1, T Bak, J Nowotny
1Centre for Materials Research in Energy Conversion, School of Materials Science and Engineering, University of New South Wales, Sydney, NSW 2052, Australia. J.Nowotny@unsw.edu.au
Abstract:
The equilibration kinetics of high-purity single-crystal TiO(2) were monitored using measurements of electrical conductivity in the temperature range 1073-1323 K and oxygen activity, p(O(2)), range 10(-13) to 75 kPa. The kinetics data were used to determine the chemical diffusion coefficient (D(chem)) within narrow ranges of p(O(2)). There was observed a complex effect of the p(O(2)) on the D(chem), which exhibits a maximum at the n-p transition. The effect of the p(O(2)) on the D(chem) was discussed in terms of the defect disorder and the related semiconducting properties. The activation energy of the D(chem), which also varies with the p(O(2)), exhibits a maximum at p(O(2)) = approximately 10(4) Pa (143 kJ/mol).
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