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Related Concept Videos

IR Spectrometers01:25

IR Spectrometers

There are two main infrared (IR) spectrophotometers: dispersive IR spectrometers and Fourier transform infrared (FTIR) spectrometers. In a dispersive IR spectrometer, a beam of infrared radiation produced by a hot wire is divided into two parallel equal-intensity beams using mirrors. One beam passes through the sample, while another is a reference beam. The beams then move through the monochromator, which separates the radiations into a continuous spectrum of different frequencies. The...
Infrared (IR) Spectroscopy: Overview01:09

Infrared (IR) Spectroscopy: Overview

When electromagnetic radiation passes through a material, atoms or molecules transition from a lower to a higher energy state by absorbing radiation corresponding to the energy difference between the two states. The absorption of infrared (IR) radiation causes transitions between vibrational energy levels in a molecule. Therefore, IR spectroscopy is a useful analytical tool for determining the molecular structure of molecules.
Different compounds display unique properties due to their...
IR Spectrum01:19

IR Spectrum

When infrared (IR) radiation passes through a molecule, the bonds stretch or bend by absorbing the radiation. This absorption creates the molecule's absorption spectrum, which is the plot of its percentage transmittance versus wavenumber.
Transmittance is defined as the ratio of the radiant power passing through a sample to that from the radiation's source. Multiplying the transmittance by 100 gives the percent transmittance (%T), which varies between 100% (no absorption) and 0% (complete...
IR Frequency Region: Fingerprint Region01:03

IR Frequency Region: Fingerprint Region

IR spectra are divided into two main regions: the diagnostic region and the fingerprint region. The diagnostic region of the spectrum lies above 1500 cm−1. The absorptions resulting from single-bond vibrations of the N–H, C–H, and O–H stretch at higher wavenumbers and appear on the left side of the spectrum. The stretching absorptions of the C≡C and C≡N occur between 2100–2300 cm−1. In contrast, those arising from stretching absorptions of the C=O, C=N, and C=C occur between 1600–1850 cm−1.
The...
Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...

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A Silicon-tipped Fiber-optic Sensing Platform with High Resolution and Fast Response
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Silicon infrared diffuser for wireless communication.

Ettore Massera1, Ilaria Rea, Ivana Nasti

  • 1Research Center Ente Nazionale Energia e Ambiente, Portici (Napoli), Italy. ettore.massera@portici.enea.it

Applied Optics
|August 24, 2006
PubMed
Summary

Researchers developed a novel method using porous silicon for infrared radio communication. This material exhibits high reflectance and quasi-Lambertian diffusion, making it ideal for optical diffusers in the 850-1600 nm range.

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Area of Science:

  • Materials Science
  • Optoelectronics
  • Photonics

Background:

  • Infrared (IR) communication systems require efficient optical components.
  • Traditional materials for optical diffusers may have limitations in specific IR wavelength ranges.
  • Silicon's unique properties offer potential for novel photonic applications.

Purpose of the Study:

  • To investigate the use of porous silicon as a novel optical diffuser for infrared radio communication.
  • To characterize the optical properties of electrochemically etched silicon in the 850-1600 nm range.
  • To evaluate the angular distribution of diffused radiation from porous silicon surfaces.

Main Methods:

  • Crystalline silicon wafers were fabricated into porous silicon using electrochemical etching.
  • Optical characterization was performed to measure reflectance in the 850-1600 nm band.
  • Angular distribution of diffused radiation was measured for various incident angles.

Main Results:

  • Porous silicon demonstrated high reflectance within the targeted infrared band (850-1600 nm).
  • The diffused radiation exhibited a quasi-Lambertian angular distribution.
  • The material's performance was confirmed as an effective incident radiation diffuser.

Conclusions:

  • Porous silicon is a promising, novel material for optical diffusers in infrared communication.
  • Electrochemical etching provides a viable method for producing functional porous silicon for photonic devices.
  • The quasi-Lambertian diffusion characteristics are suitable for broad-angle light scattering applications in IR systems.