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Updated: Jul 19, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
Published on: August 2, 2019
Anisotropic magnetoresistance and anisotropic tunneling magnetoresistance due to quantum interference in
Kirill I Bolotin1, Ferdinand Kuemmeth, D C Ralph
1Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY 14853, USA.
Abstract:
We measure the low-temperature resistance of permalloy break junctions as a function of contact size and the magnetic field angle in applied fields large enough to saturate the magnetization. For both nanometer-scale metallic contacts and tunneling devices we observe large changes in resistance with the angle, as large as 25% in the tunneling regime. The pattern of magnetoresistance is sensitive to changes in bias on a scale of a few mV. We interpret the effect as a consequence of conductance fluctuations due to quantum interference.
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