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Updated: Jul 19, 2026

Carrier Lifetime Measurements in Semiconductors through the Microwave Photoconductivity Decay Method
Published on: April 18, 2019
Effect of strain on the carrier mobility in heavily doped p-type Si
Lucia Romano1, Alberto Maria Piro, Maria Grazia Grimaldi
1CNR-MATIS and Dipartimento di Fisica e Astronomia, Università di Catania, Via S. Sofia 64, I-95123 Catania, Italy. lucia.romano@ct.infn.it
Abstract:
We present an experiment that gives insight into the origin of the dependence of the hole mobility (mu) on the dopant species in heavily doped p-type Si under low electrical field. The Hall carrier concentration and mobility were measured in Si coimplanted with B and Ga in the 0.1-2 x 10{20} cm{-3} concentration range. The strain induced by substitutional dopants, detected by high resolution x-ray diffraction, was varied by changing the relative B and Ga concentration. The effect of strain on mobility was disentangled and a linear relationship between 1/mu and the perpendicular strain was found.
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