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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

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Published on: May 28, 2016

Control of defect concentrations within a semiconductor through adsorption.

Edmund G Seebauer¹, Kapil Dev, Michael Y L Jung

¹Department of Chemical and Biomolecular Engineering, University of Illinois, Urbana, IL 61801, USA. eseebaue@uiuc.edu

Physical Review Letters

|October 10, 2006

Summary

Gas adsorption significantly impacts defect concentrations in semiconductors, even at low levels. This finding reveals a crucial factor influencing material properties and previous experimental results.

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Area of Science:

Materials Science
Solid-State Physics
Surface Chemistry

Background:

Crystalline solid properties are dictated by defect concentrations.
Semiconductor defect thermodynamics are critical for technological applications.

Purpose of the Study:

To investigate the influence of gas adsorption on semiconductor defect concentrations.
To demonstrate controllable variation of defect levels via adsorption.

Main Methods:

Studied self-diffusion rates in silicon.
Quantified defect concentrations influenced by nitrogen adsorption.

Main Results:

Defect concentrations up to 0.5 micrometers deep are profoundly affected by gas adsorption.
Less than 1% of a monolayer of nitrogen adsorption controllably varied defect concentrations over several orders of magnitude.

Conclusions:

Adsorption effects must be considered in semiconductor defect studies.
Previous measurements of diffusion and defect thermodynamics may be incomplete due to neglected adsorption effects.