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Universal spin-Hall conductance fluctuations in two dimensions.

Wei Ren¹, Zhenhua Qiao, Jian Wang

¹Department of Physics, The University of Hong Kong, Hong Kong, China.

Physical Review Letters

|October 10, 2006

Summary

We found a universal spin-Hall conductance fluctuation in disordered 2D materials, independent of specific spin-orbit interactions. This fluctuation is a universal number in the diffusive transport regime.

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Area of Science:

Condensed matter physics
Quantum transport phenomena
Spintronics

Background:

Disordered electronic systems exhibit complex transport behaviors.
Spin-Hall conductance is crucial for spintronic applications.
Spin-orbit interactions (Rashba and Dresselhaus) significantly influence electron dynamics.

Purpose of the Study:

Investigate spin-Hall conductance fluctuations in disordered 2D materials.
Analyze the impact of disorder and spin-orbit interactions on transport regimes.
Determine the universality of spin-Hall conductance fluctuations.

Main Methods:

Theoretical investigation of four-terminal devices.
Analysis of spin-Hall conductance (GsH) as a function of disorder.
Examination of transport regimes: ballistic, diffusive, and insulating.
Study of Rashba and/or Dresselhaus spin-orbit interactions.

Main Results:

GsH exhibits distinct transport regimes with increasing disorder.
A universal spin-Hall conductance fluctuation (USCF) is identified in the diffusive regime.
USCF depends on spin-orbit coupling (tso) but is independent of other parameters.
USCF is approximately 0.18e/4pi when tso is comparable to hopping energy (t).
GsH distribution transitions from Gaussian to non-Gaussian with increasing disorder.

Conclusions:

Disorder strength dictates the transport regime in these systems.
The identified USCF offers a universal characteristic of spintronic devices.
Understanding these fluctuations is key for designing advanced spintronic devices.