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Related Experiment Videos

Full-counting statistics for voltage and dephasing probes.

S Pilgram1, P Samuelsson, H Förster

  • 1Theoretische Physik, ETH Zürich, CH-8093 Zürich, Switzerland.

Physical Review Letters
|October 10, 2006
PubMed
Summary

We developed a new stochastic path integral method to calculate full-counting statistics in conductors. This method matches phase averaging for dephasing probes, simplifying analysis of quantum devices.

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Area of Science:

  • Quantum Transport
  • Mesoscopic Physics
  • Statistical Mechanics

Background:

  • Full-counting statistics (FCS) are crucial for understanding charge transport in quantum conductors.
  • Existing methods for calculating FCS can be complex, especially with dephasing and dissipation.
  • Energy-conserving dephasing and dissipative voltage probes present unique challenges in theoretical modeling.

Purpose of the Study:

  • To introduce a novel stochastic path integral method for calculating FCS.
  • To apply and validate this method for conductors with specific probe types.
  • To demonstrate the method's generalizability and equivalence to established techniques under certain conditions.

Main Methods:

  • Stochastic path integral formulation.
  • Application to a Mach-Zehnder interferometer model.

Related Experiment Videos

  • Analysis of conductors with energy-conserving dephasing and dissipative voltage probes.

    • Main Results:

    • The stochastic path integral method successfully calculates FCS for the studied conductor configurations.
    • The approach is shown to be generalizable beyond the specific interferometer example.
    • Equivalence proven between the new method and phase averaging of the cumulant generating function for single-channel dephasing probes.

    Conclusions:

    • The stochastic path integral method provides an effective and potentially simpler way to compute FCS.
    • This method offers a unified approach for analyzing quantum conductors with dephasing and dissipation.
    • The findings simplify theoretical analysis for specific quantum device geometries.