Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Experiment Videos

Generating spin currents in semiconductors with the spin Hall effect.

V Sih1, W H Lau, R C Myers

  • 1Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106, USA.

Physical Review Letters
|October 10, 2006
PubMed
Summary
This summary is machine-generated.

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Comprehensive Clinicopathological and Multiomics Characterization of Dermatofibrosarcoma Protuberans Revealed PDGFD Fusion as Distinct Molecular Subtype With Better Survival.

Modern pathology : an official journal of the United States and Canadian Academy of Pathology, Inc·2025
Same author

Artificial Coherent States of Light by Multiphoton Interference in a Single-Photon Stream.

Physical review letters·2021
Same author

Moiré pattern of interference dislocations in condensate of indirect excitons.

Nature communications·2021
Same author

Optically addressable molecular spins for quantum information processing.

Science (New York, N.Y.)·2020
Same author

Correlating dynamic strain and photoluminescence of solid-state defects with stroboscopic x-ray diffraction microscopy.

Nature communications·2019
Same author

Quantum control of surface acoustic-wave phonons.

Nature·2018

We show that spin currents in GaAs structures are driven by bulk electron spin, not edge effects. This spin polarization extends significantly into regions with minimal electric fields, revealing insights into spin transport dynamics.

Area of Science:

  • Condensed matter physics
  • Spintronics
  • Semiconductor physics

Background:

  • The spin Hall effect (SHE) generates transverse spin currents.
  • Distinguishing edge effects from bulk spin transport is crucial for understanding SHE in materials like GaAs.

Purpose of the Study:

  • To investigate electrically induced spin currents in GaAs structures.
  • To differentiate between edge effects and bulk spin transport in the spin Hall effect.
  • To quantify spin transport properties using advanced imaging and modeling.

Main Methods:

  • Utilizing Kerr rotation microscopy to visualize spin polarization.
  • Fabricating and analyzing Gallium Arsenide (GaAs) structures.
  • Employing a theoretical model that includes spin drift effects.

Related Experiment Videos

Main Results:

  • Demonstrated that spin accumulation originates from a transverse bulk electron spin current.
  • Observed spin polarization extending up to 40 microns into regions with minimal electric fields.
  • Quantified the transverse spin drift velocity by analyzing magnetic field-dependent spin polarization.

Conclusions:

  • The spin Hall effect in GaAs is dominated by bulk spin currents.
  • Spin polarization can propagate considerable distances via spin drift, even in low electric field regions.
  • The study provides a method for determining spin drift velocity in semiconductor structures.