CBED and LACBED characterization of crystal defects
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Updated: Jul 19, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
1Laboratoire de Métallurgie Physique et Génie des Matériaux, UMR CNRS 8517, USTL & ENSCL, Cité Scientifique, 59500 Villeneuve d'Ascq, France. Jean-Paul.Morniroli@univ-lille1.fr
Abstract:
Convergent-beam electron diffraction (CBED) obtained with a focused incident beam is well known for the identification of the point and space groups but it can also be used for the analysis of stacking faults and antiphase boundaries. Large-angle convergent-beam electron diffraction (LACBED) is performed with a large defocused incident beam and is well adapted to the characterization of most types of crystal defects: point defects, perfect and partial dislocations, stacking faults, antiphase boundaries and grain boundaries. Among the advantages of these methods with respect to the conventional transmission electron microscopy methods, are that one or few patterns are required for a full analysis and the interpretations are easy and unambiguous. The LACBED technique is particularly useful for the analysis of dislocations present in anisotropic and beam-sensitive materials.
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