New developments in the characterization of dislocation loops from LACBED patterns
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Updated: Jul 19, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
J P Morniroli1, R K W Marceau, S P Ringer
1Laboratoire de Métallurgie Physique et Génie des Matériaux, UMR CNRS 8517, USTL & ENSCL, Cité Scientifique, 59500 Villeneuve d'Ascq, France. Jean-Paul.Morniroli@univ-lille1.fr
Abstract:
The characterization of the Burgers vector of dislocations from large-angle convergent-beam electron diffraction (LACBED) patterns is now a well-established method. The method has already been applied to relatively large and isolated dislocation loops in semiconductors. Nevertheless, some severe experimental difficulties are encountered with small dislocation loops. By using a 2 microm selected-area aperture and a carbon contamination point to mark the loop of interest, we were able to characterize both the plane and the Burgers vector of dislocation loops of a few tens of nanometres in size present in Al-Cu-Mg alloys.
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