Direct measurement of the temperature coefficient of the electron quasi-fermi level in dye-sensitized nanocrystalline...

A novel type of dye-sensitized cell (DSC) with a passivated titanium sensor electrode located on top of the nanocrystalline titanium dioxide layer has been used to study the temperature dependence of the electron quasi-Fermi level relative to the I3-/I- redox-Fermi level under short circuit conditions. The results show that the Fermi level decreases with increasing temperature (-1.76 meV K(-1)) as predicted for diffusive electron transport at short circuit. A smaller temperature dependence (-0.25 meV K(-1)) of the position of the TiO2 conduction band relative to the I3-/I- redox-Fermi level was deduced from the shifts in the trap distribution. An expression for the temperature dependence of the open circuit voltage, U(photo), has been derived. The experimentally observed temperature dependence of U(photo) gave values of the activation energy (0.25 eV) and preexponential factor (10(8) s(-1)) for the transfer of electrons from the conduction band of the nanocrystalline TiO2 to triiodide ions.