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Updated: Jul 19, 2026

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
Imaging of localized electronic states at a nonconducting surface by single-electron tunneling force microscopy
Ezra B Bussmann1, Ning Zheng, Clayton C Williams
1Physics Department, University of Utah, 115 S 1400 E RM 201, Salt Lake City, Utah 84112, USA.
Abstract:
Localized electronic states near a nonconducting SiO(2) surface are imaged on a approximately 1 nm scale by single-electron tunneling between the states and a scanning probe tip. Each tunneling electron is detected by electrostatic force. The images represent the number of tunneling electrons at each spatial location. The spatial resolution of the single electron tunneling force microscope is determined by quantum mechanical tunneling, providing new atomic-scale access to electronic states in dielectric surfaces and nonconducting nanostructures.
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