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Related Experiment Videos

Superconductivity in doped cubic silicon.

E Bustarret1, C Marcenat, P Achatz

  • 1Laboratoire d'Etudes des Propriétés Electroniques des Solides, CNRS, BP166, 38042 Grenoble, France. etienne.bustarret@grenoble.cnrs.fr

Nature
|November 24, 2006
PubMed
Summary
This summary is machine-generated.

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Superconductivity has been achieved in silicon for the first time by introducing high concentrations of boron. This breakthrough enables the development of novel silicon-based superconducting nanostructures and devices.

Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Semiconductor Physics

Background:

  • Silicon's resistivity is tunable via doping, but superconductivity has not been observed.
  • Hybrid devices integrating silicon and superconductors are underdeveloped.

Purpose of the Study:

  • To induce superconductivity in silicon.
  • To explore silicon-based superconducting nanostructures and devices.

Main Methods:

  • Gas immersion laser doping to achieve high boron concentrations in silicon.
  • Electrical resistivity and magnetic susceptibility measurements.
  • Ab initio calculations and Raman spectroscopy.

Main Results:

  • Superconductivity induced in boron-doped silicon (Si:B) at a transition temperature (T(c)) of approximately 0.35 K.

Related Experiment Videos

  • Critical magnetic field of about 0.4 T observed.
  • Doping confirmed as substitutional, with a conventional phonon-mediated coupling mechanism.

    • Conclusions:

    • High-concentration boron doping enables superconductivity in silicon.
    • This research paves the way for silicon-based superconducting nanostructures and mesoscopic devices with high-quality interfaces.