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Transient dynamics and directional solidification in space platforms.

X Ruiz1

  • 1Applied Physics Laboratory, Facultat de Quimica, Universitat Rovira i Virgili, Campus San Pere Sescelades, 43007 Tarragona, Spain. josepxavier.ruiz@urv.net

Annals of the New York Academy of Sciences
|November 25, 2006
PubMed
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Short impulsive forces minimally affect semiconductor segregation patterns in Bridgman growth, regardless of pulse shape. Segregation primarily depends on growth velocity and impulse duration, not pulse form.

Area of Science:

  • Materials Science
  • Solid-State Physics
  • Computational Fluid Dynamics

Background:

  • Semiconductor manufacturing relies on controlled segregation during crystal growth.
  • Bridgman growth is a common technique for producing semiconductor crystals.
  • Understanding external influences on segregation is crucial for material quality.

Purpose of the Study:

  • To investigate the effect of short impulsive forces on semiconductor segregation patterns.
  • To analyze the influence of impulse shape (rectangular vs. half-sinusoidal) and parameters on segregation.
  • To determine the impact of these forces on thermal flux at the growth interface.

Main Methods:

  • A time-dependent 2D numerical simulation was employed.
  • Impulsive forces were applied parallel to the growth interface.

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  • Three different semiconductors were considered in the simulations.

    • Main Results:

    • Reduced longitudinal and radial segregation were largely insensitive to pulse shape.
    • Longitudinal segregation depended mainly on growth velocity for constant g-dose impulses.
    • Radial segregation depended on growth velocity and weakly on impulse activity time.
    • Thermal flux was shape-dependent and not always synchronous with impulses.

    Conclusions:

    • Impulsive force shape has a minimal impact on semiconductor segregation patterns.
    • Growth velocity and impulse duration are key factors influencing segregation.
    • The study provides insights into optimizing Bridgman growth for semiconductor production.