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Single-ion dosemeter based on floating gate memories.

G Cellere1, A Paccagnella, A Visconti

  • 1Department of Information Engineering, Padova University, Padova, Italy. giorgio.cellere@ieee.org

Radiation Protection Dosimetry
|November 30, 2006
PubMed
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Floating Gate (FG) nonvolatile memories can detect single ion impacts. These devices offer a novel approach to ion dosimetry, distinguishing ion energy by measuring charge loss.

Area of Science:

  • Semiconductor device physics
  • Radiation detection and measurement

Background:

  • Floating Gate (FG) nonvolatile memories utilize a charged polysilicon layer to alter MOSFET threshold voltage.
  • Ionizing radiation, such as high-energy ions, can cause charge loss in the FG, impacting device performance.

Purpose of the Study:

  • To explore the potential of FG nonvolatile memories as single ion dosemeters.
  • To investigate the capability of FG devices to distinguish the Linear Energy Transfer (LET) of impinging ions.

Main Methods:

  • Characterization of charge loss in FG devices upon exposure to high-energy ions.
  • Analysis of the relationship between ion LET and observed charge loss.
  • Evaluation of the spatial resolution of FG devices for ion detection.

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Main Results:

  • Demonstrated that FG devices experience charge loss proportional to ion LET.
  • Showcased sub-micrometer spatial resolution in detecting individual ion impacts.
  • Confirmed the ability to differentiate ions based on their LET through measured charge loss.

Conclusions:

  • FG nonvolatile memories show promise as single ion dosemeters.
  • These devices offer high spatial resolution and LET discrimination capabilities for radiation monitoring.