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Methods of Ex Situ and In Situ Investigations of Structural Transformations: The Case of Crystallization of Metallic Glasses
Published on: June 7, 2018
Large melting-point hysteresis of Ge nanocrystals embedded in SiO2
1Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA.
Physical Review Letters
|December 13, 2006
Abstract:
The melting behavior of Ge nanocrystals embedded within SiO2 is evaluated using in situ transmission electron microscopy. The observed melting-point hysteresis is large (+/-17%) and nearly symmetric about the bulk melting point. This hysteresis is modeled successfully using classical nucleation theory without the need to invoke epitaxy.
