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Updated: Jul 18, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Electrically tunable g factors in quantum dot molecular spin states
M F Doty1, M Scheibner, I V Ponomarev
1Naval Research Laboratory, Washington, D.C. 20375, USA. doty@bloch.nrl.navy.mil
Abstract:
We present a magnetophotoluminescence study of individual vertically stacked InAs/GaAs quantum dot pairs separated by thin tunnel barriers. As an applied electric field tunes the relative energies of the two dots, we observe a strong resonant increase or decrease in the g factors of different spin states that have molecular wave functions distributed over both quantum dots. We propose a phenomenological model for the change in g factor based on resonant changes in the amplitude of the wave function in the barrier due to the formation of bonding and antibonding orbitals.
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