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Updated: Jul 18, 2026

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
10:31

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

Printed arrays of aligned GaAs wires for flexible transistors, diodes, and circuits on plastic substrates

Yugang Sun1, Hoon-Sik Kim, Etienne Menard

  • 1Department of Materials Science and Engineering, Frederick Seitz Materials Research Laboratory and Beckman Institute University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA.

Small (Weinheim an Der Bergstrasse, Germany)
|December 29, 2006
PubMed
Abstract

No abstract available in PubMed .

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