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Related Concept Videos

Field Effect Transistor01:29

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Characteristics of MOSFET01:17

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable quicker...
MOSFET01:16

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
Biasing of FET01:22

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...
P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

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Related Experiment Video

Updated: Jul 17, 2026

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices
09:14

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices

Published on: December 7, 2017

High electron mobility InAs nanowire field-effect transistors.

Shadi A Dayeh1, David P R Aplin, Xiaotian Zhou

  • 1Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, CA 92093-0407, USA.

Small (Weinheim an Der Bergstrasse, Germany)
|January 3, 2007
PubMed
Summary

High-performance indium arsenide nanowire field-effect transistors (NWFETs) achieve record mobility. This study presents a new model for accurately characterizing nanowire (NW) parameters, crucial for advanced electronic devices.

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Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications
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Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications

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Related Experiment Videos

Last Updated: Jul 17, 2026

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices
09:14

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices

Published on: December 7, 2017

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
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Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

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Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications
11:25

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications

Published on: April 21, 2016

Area of Science:

  • Materials Science
  • Nanotechnology
  • Semiconductor Physics

Background:

  • Indium arsenide (InAs) nanowires (NWs) are promising for next-generation electronics due to their high carrier mobility.
  • Fabricating reliable NW field-effect transistors (NWFETs) with accurate parameter extraction remains a challenge.

Purpose of the Study:

  • To synthesize single-crystal InAs NWs and fabricate NWFETs.
  • To develop a comprehensive model for accurate characterization of NW parameters in top-gate NWFETs.
  • To achieve and report the highest semiconductor NW mobility to date.

Main Methods:

  • Synthesis of InAs NWs via metal-organic chemical vapor deposition (MOCVD).
  • Fabrication of NWFETs on SiO(2)/n(+)-Si substrates with back-gate and top-gate configurations.
  • Development of a device model accounting for resistances, capacitance, and gate geometry for parameter extraction.

Main Results:

  • Achieved room-temperature field-effect mobility as high as 6580 cm(2) V(-1) s(-1) in InAs NWFETs.
  • The developed model accurately estimates carrier field-effect mobility and concentration.
  • This represents the highest reported mobility in any semiconductor NW.

Conclusions:

  • Single-crystal InAs NWs are successfully synthesized and fabricated into high-performance NWFETs.
  • The developed model provides accurate characterization of NW parameters, crucial for device optimization.
  • The record-high mobility demonstrates the potential of InAs NWs for advanced electronic applications.