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Related Experiment Videos

Error analysis in inverse scatterometry. I. Modeling.

Rayan M Al-Assaad1, Dale M Byrne

  • 1Erik Jonsson School of Engineering and Computer Science, University of Texas at Dallas, Richardson, Texas 75083, USA.

Journal of the Optical Society of America. A, Optics, Image Science, and Vision
|January 9, 2007
PubMed
Summary

Scatterometry, an optical technique for semiconductor metrology, improves critical dimension accuracy by modeling measurement errors. This study refines profile parameter retrieval by accounting for random and offset errors, enhancing solution precision.

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Applied opticsยท2006
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Area of Science:

  • Optical Metrology
  • Semiconductor Manufacturing
  • Nanoscale Characterization

Background:

  • Scatterometry is crucial for measuring critical dimensions in semiconductor fabrication.
  • Previous iterative methods for profile parameter retrieval have limitations.
  • Understanding and modeling measurement errors is essential for accurate metrology.

Purpose of the Study:

  • To develop rigorous models for random and offset errors in scatterometry.
  • To analyze error propagation from measurement data to profile parameters.
  • To demonstrate improved solution accuracy by adjusting for offset errors.

Main Methods:

  • Development of rigorous models for scatterometric measurement errors.
  • Analysis of error propagation in iterative linearized solutions.

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  • Validation using theoretical and experimental data with offset error adjustments.

    • Main Results:

    • Quantified the impact of random and offset errors on profile parameter estimation.
    • Demonstrated significant improvement in solution accuracy by correcting for offset errors.
    • Established a foundation for advanced error compensation in scatterometry.

    Conclusions:

    • Rigorous error modeling is vital for accurate scatterometry in semiconductor metrology.
    • Adjusting for offset errors demonstrably enhances the precision of critical dimension measurements.
    • The developed models provide a pathway for more robust scatterometric analysis.