Enhancement of the luminescence intensity of InAs/GaAs quantum dots induced by an external electric field
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Updated: Jul 17, 2026

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
Published on: October 13, 2017
Evgenii S Moskalenko1, Mats Larsson, K Fredrik Karlsson
1Department of Physics, Chemistry and Biology (IFM), Linköping University, S-581 83 Linköping, Sweden.
Abstract:
InAs/GaAs quantum dots have been subjected to a lateral external electric field in low-temperature microphotoluminescence measurements. It is demonstrated that the dot PL signal could be increased several times depending on the magnitude of the external field and the strength of the internal (built-in) electric field, which could be altered by an additional infrared illumination of the sample. The observed effects are explained by a model that accounts for the essentially faster lateral transport of the photoexcited carriers achieved in an electric field.
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