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Updated: Jul 17, 2026

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
Published on: August 29, 2025
Detection of oxidized low density lipoproteins by indium oxide nanowires-based field effect transistor
Mahsa Rouhanizadeh1, Tao Tang, Chao Li
1Dept. of Biomedical Eng. & Cardiovascular Medicine, Southern California Univ., Los Angeles, CA 90089, USA.
Abstract:
Oxidized low density lipoprotein (oxLDL) particles are known to initiate the development of coronary artery disease. Field effect transistors (FET) made of indium oxide (In2O3) nanowires have been demonstrated as sensitive chemical sensors for gaseous molecules such as NO2 and NH3. We hereby, apply In2O3 nanowires FETs to differentiate oxLDL from native LDL (nLDL), cytochrome-c and bovine serum albumin in terms of the transistor characteristic curves: I(D)-V(GS) (current versus drain-source voltage) and I(D)-V(GS) (current versus gate-source voltage). Measurements under static and flow conditions revealed that exposure of nanowires to these redox proteins selectively changed the FET conductivity and the gating effect of the transistors. To enhance the selectivity for oxLDL detection, surface chemistry modification with antioxLDL antibody was performed.

