Related Experiment Video
Updated: Jul 17, 2026

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
Nonadiabatic tunneling in ponderomotive barriers
1Department of Astrophysical Sciences, Princeton University, Princeton, NJ 08544, USA.
Abstract:
Localized regions of intense large-scale radiofrequency field are known to act like effective ("ponderomotive") potential barriers, which scatter particles elastically and in the direction determined by the particle initial velocity rather than phase. In smaller-scale fields, transmission through a ponderomotive barrier is probabilistic and resembles tunneling of a quantum particle through a static potential. We derive asymptotic expressions for the phase-averaged transmission coefficient T as a function of the particle energy E0. We show that, unlike for a truly quantum particle, T(E0) is of algebraic form and has a threshold, below which transmission does not occur. We also find a threshold in E0, above which all particles are transmitted regardless of their initial phase.
Related Concept Videos
P-N junction
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Fermi Level Dynamics
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Debye–Huckel–Onsager Conductance Equation

