Electrostatic potential and double layer force in a semiconductor-electrolyte-semiconductor heterojunction

This paper reports a theoretical study of the electrostatic potential within a so-called pen-heterojunction made up of two semi-infinite, doped semiconductor media separated by an electrolyte region. An external potential is then applied across the entire system. Both the electrostatic potentials and double layer surface forces are studied as functions of the usual double layer system properties, semiconductor properties such as doping concentrations of acceptor and donator atoms, as well as applied potential. We find that both attractive and repulsive forces are possible depending on the surface charges on the electrolyte-semiconductor interfaces, and that these forces can be significantly modified by the applied potential and by the doping levels in the semiconductors.